Tellurium nanowires pave the way for next-generation electronics

Scientists have created a wire of nanometer thickness,which consists of chains of tellurium atoms located inside a boron nitride nanotube. This design conducts electricity well, is isolated, and can be controlled by light or pressure.

Gradually the electronics are getting smaller andmore efficiently, therefore, the demand for new materials for wiring is growing, which should not only perform their basic functions well, but bend without cracks and tears, and also withstand temperature changes or even shocks. Impossible without it the existence of full-fledged wearable gadgets, electronic fabric, ultra-thin devices

Team of physicists from michigan technologyUniversity created tiny straws of boron nitride, with a diameter of only 2 nm and with a wall thickness of 1 atom. They are durable, flexible and have good insulating properties. Then the scientists passed through the hollow tube the atomic chains of tellurium, which have good current-carrying ability with a current density of 1.5 × 108 A cm-2. The result is a tiny wire with a sheath.

According to physicists, tellurium has a number of unique characteristics and, unlike silicon, the atoms in its chain are not arranged in a straight line, but in the form of a spiral.

The team used these nanowires to createfield effect transistors 2 nm wide. They also experimented with encapsulation of a single chain and a triple beam of tellurium atoms. In addition, tellurium-filled nanowires are sensitive to light and pressure, which is another promising aspect for future electronics.

Before using such nanowires in real devices, scientists have to carefully study their properties and potential.

We also previously reported that engineershave developed transistors completely consisting of flaxen threads coated with carbon nanotubes, which can be used to create any logic and integrated circuits or entire electronic devices.